Toshiba has announced that it has begun mass production of NAND flash components constructed using 24 nanometer technology. The manufacturing process is said to be used for 2 bit-per-cell 64-gigabit components, which are claimed to reach the highest density (8GB) on a single chip.
The company plans on expanding production with 32Gb and 3 bit-per-cell offerings. The chips also utilize Toshiba’s double data rate (DDR), toggle mode technology for improved data transfer speeds.
The chips are destined for use in cellphones, digital video cameras, MP players and the like.